Program

Program

Tutorial day (Sunday, July 21) will feature talks geared toward students, early-career scientists, and newcomers to the field.

There will be a welcome reception at the Motif hotel Sunday evening (July 21).

The conference will open at 8:45 am July 22 and close 1:00 pm July 26.

Preliminary Timetable

Plenary speakers

Tentative talk title

Martin Brandt
Technical University Munich, Germany

TBA

Rebecca Jones
Deputy Director, Solar Technologies Office, DOE, USA

Photovoltaics: Research priorities and the role of defects

Rachel Oliver
Cambridge University, UK

Mesoporous gallium nitride

Susan Siebentritt
University of Luxembourg

Semiconductor tail states and the efficiency of thin film solar cells

Chris Van de Walle
University of California, Santa Barbara, USA

Quantum computing, transmitting, and sensing with defects

Invited speakers

 

Kirstin Alberi
National Renewable Energy Laboratory, USA

Modifying defect formation in semiconductors with light

Scott Chambers
Pacific Northwest National Laboratory, USA

New evidence for interstitial oxygen defects in SrTiO3 and its interface with intrinsic Si

Weimin Chen
Linköping University, Sweden

Few-defect enabled room-temperature spin-photon interfaces in 1D and 0D semiconductor nanostructures

Gregory Fuchs
Cornell University, USA

Interactions between single defect centers and phonons

Naoki Fukata
University of Tsukuba, Japan

Demonstration of hole gas accumulation of core-shell nanowires using Si and Ge radial heterostructures

Adam Gali
Budapest University of Technology and Economics, Hungary

Progress in the ab initio description of solid state defect qubits

Hannah Joyce
Cambridge University, UK

Ultrafast spectroscopy for studying defects in semiconductor nanostructures

Gudrun Kissinger
IHP Microelectronics, Germany

Oxide precipitate nucleation on silicon wafers with deposited oxide and nitride layers

Marjorie Olmstead
University of Washington, USA

Gallium oxide:  a tunable, solar-blind, transparent conductor

Stephen Pearton
University of Florida, USA

Effect on device performance of defects and impurities in β-Ga2O3

Nicola Perry
University of Illinois, USA

Relating disorder and defect dynamics in mixed conducting oxides with high temperature optical relaxation

Rebecca Peterson
University of Michigan, USA

Interfacial defects in Ga2O3

Yuan Ping
University of California Santa Cruz, USA

Ionization energies and excited state lifetime of charged defects in 2D materials from first-principles calculations

Shriram Ramanathan
Purdue University, USA

Complex oxides for animal-machine interfaces

Hosung Seo
Ajou University, Korea

First-principles theory of quantum defects in two dimensional crystals for quantum information science

Shadi Shahedipour-Sandvik
State University of New York Polytechnic Institute, USA

Impact of post implantation annealing on defect microstructural evolution in GaN:Mg

Julita Smalc-Koziorawska
Institute of High Pressure Physics, Poland

TBA

Michael Thewalt
Simon Fraser University, Canada

New insights into radiation damage centers in silicon – isotopically enriched 28Si keeps on surprising

Kazuhisa Torigoe
SUMCO Corporation, Japan

Effect of point defects on diffusion of impurity atoms in silicon crystals

Jörg Wrachtrup
University of Stuttgart, Germany

Semiconductor defects for quantum applications

Wan-Jian Yin
Soochow University, China

Defect control for solar energy materials via first-principles calculations

Shengbai Zhang
Rensselaer Polytechnic Institute, USA

Defects in two-dimensional materials: challenges and opportunities

Mary Ellen Zvanut
University of Alabama Birmingham, USA

Defect properties determined by time-dependent electron paramagnetic resonance spectroscopy

Plenary talks: 40 min + 5 min questions

Invited talks: 25 min + 5 min questions

Contributed talks: 15 min + 5 min questions