Program

Program

Tutorial day (Sunday, July 21) will feature talks geared toward students, early-career scientists, and newcomers to the field.

There will be a welcome reception at the Motif hotel from 5-8 PM on Sunday evening (July 21).

The conference will open at 8:45 am July 22 and close 1:00 pm July 26.

Conference Program

Plenary talks: 40 min + 5 min questions
Invited talks: 25 min + 5 min questions
Contributed talks: 15 min + 5 min questions
Posters (max): 36″ tall x 48″ wide (914 mm x 1219 mm)

Plenary speakers

Talk title

Martin Brandt
Technical University Munich, Germany

Defects, spins and charge transport

Becca Jones-Albertus
Deputy Director, Solar Energy Technologies Office, DOE, USA

Photovoltaics: Research priorities and the role of defects

Rachel Oliver
Cambridge University, UK

Mesoporous gallium nitride

Susan Siebentritt
University of Luxembourg

Semiconductor tail states and the efficiency of thin film solar cells

Chris Van de Walle
University of California, Santa Barbara, USA

Quantum computing, transmitting, and sensing with defects

Invited speakers

 

Kirstin Alberi
National Renewable Energy Laboratory, USA

Modifying defect formation during epitaxy with photons

Scott Chambers
Pacific Northwest National Laboratory, USA

Interstitial oxygen deep-level traps in n-SrTiO3(001)

Weimin Chen
Linköping University, Sweden

Few-defect enabled room-temperature spin-photon interfaces in 1D and 0D semiconductor nanostructures

Gregory Fuchs
Cornell University, USA

Interactions between single defect centers and phonons

Naoki Fukata
University of Tsukuba, Japan

Control of impurity doping in core-shell nanowires using Si and Ge radial heterostructures

Adam Gali
Budapest University of Technology and Economics, Hungary

The progress in the ab initio description of solid state defect qubits

Hannah Joyce
Cambridge University, UK

Ultrafast contact-free spectroscopy for studying defects in semiconductor nanostructures

Gudrun Kissinger
IHP Microelectronics, Germany

Oxide precipitate nucleation on silicon wafers with deposited oxide and nitride layers

Marjorie Olmstead
University of Washington, USA

Gallium oxide:  a tunable, solar-blind, transparent conductor

Stephen Pearton
University of Florida, USA

Effect on device performance of defects and impurities in β-Ga2O3

Nicola Perry
University of Illinois, USA

Relating disorder and defect dynamics in mixed conducting oxides with high temperature optical relaxation

Rebecca Peterson
University of Michigan, USA

Interfacial defects in Ga2O3

Yuan Ping
University of California Santa Cruz, USA

Charge and spin dynamics for defects in two-dimensional  materials for quantum information    

Shriram Ramanathan
Purdue University, USA

Complex oxides for animal-machine interfaces

Hosung Seo
Ajou University, Korea

First-principles theory of quantum defects in two dimensional crystals for quantum information science

Shadi Shahedipour-Sandvik
State University of New York Polytechnic Institute, USA

Impact of post implantation annealing on defect microstructural evolution in GaN:Mg

Michael Thewalt
Simon Fraser University, Canada

New insights into radiation damage centers in silicon – isotopically enriched 28Si keeps on surprising

Kazuhisa Torigoe
SUMCO Corporation, Japan

Effect of self-interstitials emitted by oxygen precipitation on boron and phosphorous diffusion in heavily doped silicon wafer

Jörg Wrachtrup
University of Stuttgart, Germany

Semiconductor defects for quantum applications

Wan-Jian Yin
Soochow University, China

Defect control for solar energy materials via first-principles calculations

Shengbai Zhang
Rensselaer Polytechnic Institute, USA

Defects in two-dimensional materials: challenges and opportunities

Mary Ellen Zvanut
University of Alabama Birmingham, USA

Defect properties determined by time-dependent EPR